Microelectronic devices with through-substrate interconnects and associated methods of manufacturing
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United States of America Patent
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Dec 9, 2014
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Feb 8, 2010
filing date -
Feb 8, 2010
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Abstract
Microelectronic devices with through-substrate interconnects and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor device includes a semiconductor substrate carrying first and second metallization layers. The second metallization layer is spaced apart from the semiconductor substrate with the first metallization layer therebetween. The semiconductor device also includes a conductive interconnect extending at least partially through the semiconductor substrate. The first metallization layer is in electrical contact with the conductive interconnect via the second metallization layer.
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