Hybrid laser and plasma etch wafer dicing using substrate carrier
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United States of America Patent
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Dec 16, 2014
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app pub date -
Jun 15, 2011
filing date -
Jun 15, 2011
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Abstract
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier.
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