Defect removal process

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United States of America Patent

PATENT NO 8912489
SERIAL NO

13783562

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Abstract

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A process is provided for the removal of defects, for example, micro-bridging defects during device fabrication. In one aspect, a method includes: obtaining a wafer after lithography processing and exposing the wafer to at least one electron beam. In another aspect, a system includes: selecting a substrate with micro-bridging defects after the substrate undergoes lithography processing; preparing the substrate for exposure to at least one electron beam; and exposing the substrate to the at least one electron beam.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wei, Yayi Altamont, US 20 106

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