Shallow junction photodiode for detecting short wavelength light
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United States of America Patent
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Dec 16, 2014
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app pub date -
Jan 24, 2013
filing date -
Jan 24, 2013
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Abstract
The present invention is a photodiode or photodiode array having improved ruggedness for a shallow junction photodiode which is typically used in the detection of short wavelengths of light. In one embodiment, the photodiode has a relatively deep, lightly-doped P zone underneath a P+ layer. By moving the shallow junction to a deeper junction in a range of 2-5 μm below the photodiode surface, the improved device has improved ruggedness, is less prone to degradation, and has an improved linear current.
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