Method for making memory cell by melting phase change material in confined space
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United States of America Patent
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Dec 23, 2014
Grant Date -
Sep 18, 2014
app pub date -
Sep 26, 2013
filing date -
Mar 13, 2013
priority date (Note) -
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Abstract
To form a memory cell with a phase change element, a hole is formed through an insulator to a bottom electrode, and a phase change material is deposited on the insulator surface covering the hole. A confining structure is formed over the phase change material so the phase change material expands into the hole when heated to melting to become electrically connected to the bottom electrode. A top electrode is formed over and electrically connects to the phase change material. The bottom electrode can include a main portion and an extension having a reduced lateral dimension. The confining structure can include capping material having a higher melting temperature than the phase change material, and sufficient tensile strength to ensure the phase change material moves into the hole when the phase change material melts and expands. The hole can be a J shaped hole.
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