Low operational current phase change memory structures
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 23, 2014
Grant Date -
Apr 5, 2012
app pub date -
Dec 13, 2011
filing date -
Apr 30, 2009
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Memory cells described herein have an increased current density at lateral edges of the active region compared to that of conventional mushroom-type memory cells, resulting in improved operational current efficiency. As a result, the amount of heat generated within the lateral edges per unit value of current is increased relative to that of conventional mushroom-type memory cells. Therefore, the amount of current needed to induce phase change is reduced.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully