Nanopyramid sized opto-electronic structure and method for manufacturing of same

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United States of America Patent

PATENT NO 8921141
SERIAL NO

14030145

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Abstract

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Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanopyramids are grown utilizing a CVD based selective area growth technique. The nanopyramids are grown directly or as core-shell structures.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU GYEONGGI-DO SUWON-SI 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gardner, Nathan Sunnyvale, US 36 573
Kryliouk, Olga Sunnyvale, US 53 1060
Vescovi, Giuliano Portilho Lund, SE 2 39

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