Precision IC resistor fabrication
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United States of America Patent
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Dec 30, 2014
Grant Date -
N/A
app pub date -
Sep 20, 2013
filing date -
Sep 20, 2013
priority date (Note) -
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Abstract
A method for fabricating a resistor in a dielectric layer of an integrated circuit (IC) is disclosed. The method may include creating a trench with a first side, a second side opposing the first side, and a bottom, in the dielectric layer, and depositing a conformal film onto the first side, the second side and the bottom of the trench. The method may also include removing the conformal film from the bottom and the second side of the trench, and filling the trench with an insulator. The method may also include removing the conformal film from the first side of the trench to form a receptacle adjacent to the insulator, and depositing electrically resistive material into the receptacle to form a resistor.
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