Nanowire field effect transistor device
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United States of America Patent
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Dec 30, 2014
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N/A
app pub date -
Sep 10, 2012
filing date -
Nov 9, 2011
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Abstract
A field effect transistor device includes a nanowire, a gate stack comprising a gate dielectric layer disposed on the nanowire, a gate conductor layer disposed on the dielectric layer and a substrate, and an active region including a sidewall contact portion disposed on the substrate adjacent to the gate stack, the side wall contact portion is electrically in contact with the nanowire.
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