Semiconductor device

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United States of America Patent

PATENT NO 8921920
SERIAL NO

13418620

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Abstract

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A semiconductor device has a semiconductor substrate, and a semiconductor element having an FET on the semiconductor substrate and comprises a different threshold voltage depending on an OFF state and an ON state. The semiconductor element has an insulating film disposed above a part where a channel of the semiconductor substrate is formed, a gate electrode disposed above the insulating film, and a charge trap film disposed between the insulating film and the gate electrode, and to exchange more electrons with the gate electrode than with the channel.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujiki, Jun Yokohama, JP 76 422
Kawanaka, Shigeru Yokohama, JP 36 700
Kawasumi, Atsushi Kawasaki, JP 86 767
Tatsumura, Kosuke Kawasaki, JP 85 390
Yasuda, Naoki Yokohama, JP 132 1419

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