Semiconductor memory device
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United States of America Patent
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Dec 30, 2014
Issued Date -
N/A
app pub date -
Jul 11, 2013
filing date -
Mar 20, 2013
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a cell transistor, an extraction section, a guard ring, a first transistor, and a second transistor. The semiconductor substrate includes first, second, third, and fourth regions. The fourth region includes first and second portions. The cell transistor is provided on the first region and includes a first insulating film, a charge storage film, and a first electrode. The extraction section is provided on the second region and includes a second insulating film, and an extension electrode. The guard ring is provided on the third region and includes a third insulating. The first transistor is provided on the first portion and includes a fourth insulating, and a second electrode. The second transistor is provided on the second portion and includes a fifth insulating film, and a third electrode.
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