Nonvolatile memory and method with improved I/O interface

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United States of America Patent

PATENT NO 8923065
SERIAL NO

13801142

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Abstract

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Each I/O channel between a controller and one or more memory dice of a memory device has a driver on one end and a receiver at the other end. The receiver is optionally terminated with a pseudo open-drain (“POD”) termination instead of the conventional center-tapped (“CTT”) termination to save energy. During a read operation, data is driven from the memory die to a POD terminated receiver circuit in the controller. With POD termination, the degradation in performance due to the more non-linear driver in the memory die, fabricated for example in the NAND technology processing, is alleviated by an adaptive reference voltage level adjustment in the receiver circuit of the controller. Optionally, the receiver circuit of a memory die is also provided with an adaptive reference level adjustment.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ramachandra, Venkatesh Prasad San Jose, US 10 14

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