Spalling methods to form multi-junction photovoltaic structure
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United States of America Patent
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Jan 6, 2015
Grant Date -
Dec 20, 2012
app pub date -
Jun 14, 2011
filing date -
Jun 14, 2011
priority date (Note) -
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Abstract
A method cleaving a semiconductor material that includes providing a germanium substrate having a germanium and tin alloy layer is present therein. A stressor layer is deposited on a surface of the germanium substrate. A stress from the stressor layer is applied to the germanium substrate, in which the stress cleaves the germanium substrate to provide a cleaved surface. The cleaved surface of the germanium substrate is then selective to the germanium and tin alloy layer of the germanium substrate. In another embodiment, the germanium and tin alloy layer may function as a fracture plane during a spalling method.
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