SOI bipolar junction transistor with substrate bias voltages

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United States of America Patent

PATENT NO 8927380
SERIAL NO

13369261

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Abstract

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A circuit configuration and methods for controlling parameters of a bipolar junction transistor (BJT) fabricated on a substrate. A bias voltage is electrically coupled to the substrate and can be adjusted to alter the working parameters of a target BJT.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cai, Jin Cortlandt Manor, US 131 1823
Ning, Tak H Yorktown Heights, US 251 3242

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