Nonvolatile semiconductor memory device and manufacturing method thereof
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United States of America Patent
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Jan 6, 2015
Grant Date -
May 13, 2010
app pub date -
Mar 23, 2009
filing date -
Nov 13, 2008
priority date (Note) -
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Abstract
A nonvolatile semiconductor memory device includes a plurality of nonvolatile memory cells formed on a semiconductor substrate, each memory cell including source and drain regions separately formed on a surface portion of the substrate, buried insulating films formed in portions of the substrate that lie under the source and drain regions and each having a dielectric constant smaller than that of the substrate, a tunnel insulating film formed on a channel region formed between the source and drain regions, a charge storage layer formed of a dielectric body on the tunnel insulating film, a block insulating film formed on the charge storage layer, and a control gate electrode formed on the block insulating film.
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