Apparatus and methods for forming a memory cell using charge monitoring

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United States of America Patent

PATENT NO 8929125
SERIAL NO

13772056

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Abstract

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Apparatuses and methods of forming a memory cell is described. In one such method, a forming charge applied to a memory cell, such as a Resistive RAM (RRAM) memory cell, is monitored to determine the progress of the forming the cell. If the cell is consuming charge too slowly, a higher voltage can be applied. If the cell is consuming charge too quickly, a lower voltage can be applied. The charge may be monitored by charging a capacitor to a certain level, then monitoring the discharge rate of the capacitor though the cell. The monitoring may use comparators to measure the charge. The monitoring may also use an analog to digital converter to perform the monitoring.

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Patent Owner(s)

  • OVONYX MEMORY TECHNOLOGY, LLC

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Calderoni, Alessandro Milan, IT 35 237
Johnson, Adam D Boise, US 17 279
Keeth, Brent Boise, US 344 10317
Ramaswamy, Durai Vishak Nirmal Boise, US 234 1252
Sandhu, Gurtej S Boise, US 1216 32319
Sills, Scott E Boise, US 205 1173

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