FinFET structure and method to adjust threshold voltage in a FinFET structure

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United States of America Patent

PATENT NO 8932949
SERIAL NO

14258063

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Abstract

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FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cartier, Eduard A New York, US 89 1900
Greene, Brian J Fishkill, US 85 1486
Guo, Dechao Niskayuna, US 268 2433
Wang, Gan Fishkill, US 65 1312
Wang, Yanfeng Cupertino, US 124 705
Wong, Keith Kwong Hon Wappingers Falls, US 241 2682

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