In-situ thermoelectric cooling

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United States of America Patent

PATENT NO 8933562
SERIAL NO

13748821

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Abstract

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Methods and structures for thermoelectric cooling of 3D semiconductor structures are disclosed. Thermoelectric vias (TEVs) to form a thermoelectric cooling structure. The TEVs are formed with an etch process similar to that used in forming electrically active through-silicon vias (TSVs). However, the etched cavities are filled with materials that exhibit the thermoelectric effect, instead of a conductive metal as with a traditional electrically active TSV. The thermoelectric materials are arranged such that when a voltage is applied to them, the thermoelectric cooling structure carries heat away from the interior of the structure from the junction where the thermoelectric materials are electrically connected.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Farooq, Mukta G Hopewell Junction, US 212 3359
Kinser, Emily Poughkeepsie, US 6 16
Rolick-DiGiacomio, JoAnn M Clinton Corners, US 2 6
Tejwani, Charu White Plains, US 2 6

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