Nitride electronic device and method for manufacturing the same
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United States of America Patent
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Jan 20, 2015
Grant Date -
Jul 31, 2014
app pub date -
Mar 31, 2014
filing date -
Jul 19, 2011
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Abstract
The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.
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