Selective epitaxial overgrowth comprising air gaps
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United States of America Patent
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Jan 20, 2015
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app pub date -
Apr 26, 2012
filing date -
Apr 26, 2011
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Abstract
An embodiment of the present disclosure is directed to a semiconductor device. The semiconductor devise comprises a substrate. An epitaxially grown semiconductor material is disposed over at least a portion of the substrate. A nanotemplate structure is disposed at least partially within the semiconductor material. The nanotemplate structure comprises a plurality of dielectric nanoscale features defining a plurality of nanoscale windows. An air gap is disposed between at least a portion of one or more of the nanoscale features and the semiconductor material.
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