Compositions for etching and methods of forming a semiconductor device using the same
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United States of America Patent
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Jan 27, 2015
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N/A
app pub date -
Aug 31, 2012
filing date -
Oct 18, 2011
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Abstract
Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.
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