Double patterning with inline critical dimension slimming

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United States of America Patent

PATENT NO 8940475
SERIAL NO

13158868

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Abstract

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A method for double patterning a substrate is described. The double patterning method may include a litho/freeze/litho/etch (LFLE) technique that includes a first (critical dimension) CD slimming process to reduce the first CD to a first reduced CD and a second CD slimming process to reduce the second CD to a second reduced CD.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 107-6325

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dunn, Shannon W Altamont, US 13 84
Hetzer, Dave Schenectady, US 4 56

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