High endurance nonvolatile memory

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United States of America Patent

PATENT NO 8942038
SERIAL NO

13855579

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Abstract

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A nonvolatile memory recycles previously written blocks by reassigning binary logic states and further programming memory cells with modified parameters. Cells are written twice between erase operations, thus reducing wear, and providing higher endurance. Flags indicate whether blocks are recycled, and what parameters to use in programming and reading the blocks.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Manohar, Abhijeet Bangalore, IN 63 852
Yang, Nian Niles Mountain View, US 80 990

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