Method for making solar cell having crystalline silicon P—N homojunction and amorphous silicon heterojunctions for surface passivation
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United States of America Patent
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Feb 3, 2015
Grant Date -
Jul 5, 2012
app pub date -
Nov 30, 2011
filing date -
Feb 25, 2008
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Abstract
A thin silicon solar cell is described. An example solar cell may be fabricated from a crystalline silicon wafer having a thickness of approximately 50 micrometers to 500 micrometers. The solar cell comprises a first region having a p-n homojunction, a second region that creates heterojunction surface passivation, and a third region that creates heterojunction surface passivation. Amorphous silicon layers are deposited on both sides of the silicon wafer. A final layer of transparent conductive oxide is formed on both sides. Metal contacts are applied to the transparent conductive oxide.
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