Method of making a TFT charge storage memory cell having high-mobility corrugated channel

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United States of America Patent

PATENT NO 8946017
SERIAL NO

13351456

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Abstract

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Numerous other aspects are provided a method for making a nonvolatile memory cell. The method includes forming a non-planar dielectric structure, and conformally depositing a semiconductor layer over the dielectric structure. A portion of the semiconductor layer serves as a channel region for a transistor, and the channel region is non-planar in shape.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Scheuerlein, Roy E Cupertino, US 251 12035

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