Methods of forming memory arrays and semiconductor constructions
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United States of America Patent
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Feb 3, 2015
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Aug 21, 2012
filing date -
Aug 21, 2012
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Abstract
Some embodiments include methods of forming semiconductor constructions. A heavily-doped region is formed within a first semiconductor material, and a second semiconductor material is epitaxially grown over the first semiconductor material. The second semiconductor material is patterned to form circuit components, and the heavily-doped region is patterned to form spaced-apart buried lines electrically coupling pluralities of the circuit components to one another. At least some of the patterning of the heavily-doped region occurs simultaneously with at least some of the patterning of the second semiconductor material.
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