Robust semiconductor power devices with design to protect transistor cells with slower switching speed
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United States of America Patent
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Feb 3, 2015
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app pub date -
Mar 3, 2008
filing date -
Mar 3, 2008
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Abstract
This invention discloses a power switch that includes a fast-switch semiconductor power device and a slow-switch semiconductor power device controllable to turn on and off a current transmitting therethrough. The slow-switch semiconductor power device further includes a ballasting resistor for increasing a device robustness of the slow switch semiconductor power device. In an exemplary embodiment, the fast-switch semiconductor power device includes a fast switch metal oxide semiconductor field effect transistor (MOSFET) and the slow-switch semiconductor power device includes a slow switch MOSFET wherein the slow switch MOSFET further includes a source ballasting resistor.
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