Memory cells with rectifying device

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United States of America Patent

PATENT NO 8947923
SERIAL NO

13158836

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Abstract

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Memory devices and methods described are shown that provide improvements, including improved cell isolation for operations such as read and write. Further, methods and devices for addressing and accessing cells are shown that provide a simple and efficient way to manage devices with multiple cells associated with each access transistor. Examples of multiple cell devices include phase change memory devices with multiple cells associated with each access transistor.

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Patent Owner(s)

  • MICRO TECHNOLOGY, INC.;OVONYX MEMORY TECHNOLOGY, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Jun Boise, US 1409 16637

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