Semiconductor device and method for producing light and laser emission
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United States of America Patent
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Feb 3, 2015
Grant Date -
Feb 20, 2014
app pub date -
Aug 2, 2013
filing date -
Aug 20, 2012
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Abstract
A method for producing light emission, including the following steps: providing a transistor structure that includes a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region; providing a cascade region between the base region and the collector region, the cascade region having a plurality of sequences of quantum size regions, the quantum size regions of the sequences varying, in the direction toward the collector region, from a relatively higher energy state to a relatively lower energy state; providing emitter, base and collector electrodes respectively coupled with the emitter, base, and collector regions; and applying electrical signals with respect to the emitter, base, and collector electrodes to cause and control light emission from the cascade region.
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