Semiconductor device and method for producing light and laser emission

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United States of America Patent

PATENT NO 8948226
APP PUB NO 20140050241A1
SERIAL NO

13958522

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Abstract

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A method for producing light emission, including the following steps: providing a transistor structure that includes a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region; providing a cascade region between the base region and the collector region, the cascade region having a plurality of sequences of quantum size regions, the quantum size regions of the sequences varying, in the direction toward the collector region, from a relatively higher energy state to a relatively lower energy state; providing emitter, base and collector electrodes respectively coupled with the emitter, base, and collector regions; and applying electrical signals with respect to the emitter, base, and collector electrodes to cause and control light emission from the cascade region.

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Patent Owner(s)

Patent OwnerAddress
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS506 S WRIGHT STREET URBANA IL 618013

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dallesasse, John Geneva, US 43 1052
Feng, Milton Champaign, US 53 789

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