Resistive switching in memory cells
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United States of America Patent
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Feb 10, 2015
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app pub date -
Apr 1, 2011
filing date -
Apr 1, 2011
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Abstract
Methods, devices, and systems associated with oxide based memory can include a method of forming a resistive switching region of a memory cell. Forming a resistive switching region of a memory cell can include forming a metal oxide material on an electrode and forming a metal material on the metal oxide material, wherein the metal material formation causes a reaction that results in a graded metal oxide portion of the memory cell.
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