Variable-resistance material memories and methods

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United States of America Patent

PATENT NO 8951832
APP PUB NO 20140199821A1
SERIAL NO

14216068

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Abstract

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Variable-resistance memory material cells are contacted by vertical bottom spacer electrodes. Variable-resistance material memory spacer cells are contacted along the edge by electrodes. Processes include the formation of the bottom spacer electrodes as well as the variable-resistance material memory spacer cells. Devices include the variable-resistance memory cells.

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Patent Owner(s)

  • OVONYX MEMORY TECHNOLOGY, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Jun Boise, US 1409 16637

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