Method of forming semiconductor device using Si-H rich silicon nitride layer

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United States of America Patent

PATENT NO 8951853
SERIAL NO

12659474

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Abstract

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A method of forming a semiconductor device includes forming a gate electrode and source/drain regions in a semiconductor substrate, forming a first capping nitride layer covering the gate electrode and the source/drain regions, the first capping nitride layer including a Si—H rich SiN layer, annealing the semiconductor substrate having the first capping nitride layer, and removing the first capping nitride layer.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jeong, Yong-Kuk Suwon-si, KR 45 632
Lim, Ha-Jin Seoul, KR 37 536
Park, Pan-Kwi Suwon-si, KR 18 153
Roh, Dong-Hyun Suwon-si, KR 30 165
Shin, Dong-Suk Yongin-si, KR 123 1718

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