Memory arrays where a distance between adjacent memory cells at one end of a substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion and formation thereof
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United States of America Patent
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Feb 10, 2015
Grant Date -
May 30, 2013
app pub date -
Jan 22, 2013
filing date -
Oct 13, 2010
priority date (Note) -
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Abstract
Memory arrays and their formation are disclosed. One such memory array has a string of series-coupled memory cells with a substantially vertical portion. A distance between adjacent memory cells at one end of the substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion. For other embodiments, thicknesses of respective control gates of the memory cells and/or thicknesses of the dielectrics between successively adjacent control gates may increase as the distances of the respective control gates/dielectrics from the opposing end of the substantially vertical portion increase.
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