Method of forming a through-silicon via utilizing a metal contact pad in a back-end-of-line wiring level to fill the through-silicon via
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United States of America Patent
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Feb 10, 2015
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N/A
app pub date -
Jul 30, 2014
filing date -
Jun 7, 2011
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Abstract
A method for fabricating through-silicon vias (TSVs) for semiconductor devices is provided. Specifically, the method involves utilizing copper contact pads in a back-end-of-line wiring level, wherein the copper contact pads act as cathodes for performing an electroplating technique to fill TSVs with plated-conductive material (e.g., copper) from an electroplating solution. Moreover, the method provides a way to fill high aspect ratio TSVs with minimal additional semiconductor fabrication process steps, which can increase the silicon area that is available for forming additional electronic components on integrated circuits.
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