Electropositive metal containing layers for semiconductor applications
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United States of America Patent
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Feb 10, 2015
Grant Date -
Oct 17, 2013
app pub date -
Sep 29, 2011
filing date -
Sep 29, 2011
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Abstract
Embodiments of the present invention provide methods for forming layers that comprise electropositive metals through ALD (atomic layer deposition) and or CVD (chemical vapor deposition) processes, layers comprising one or more electropositive metals, and semiconductor devices comprising layers comprising one or more electropositive metals. In embodiments of the invention, the layers are thin or ultrathin (films that are less than 100 {acute over (Å)} thick) and or conformal films. Additionally provided are transistor devices, metal interconnects, and computing devices comprising metal layers comprising one or more electropositive metals.
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