Method of fabricating metal-insulator-semiconductor tunneling contacts using conformal deposition and thermal growth processes
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United States of America Patent
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Dec 2, 2014
Grant Date -
May 10, 2012
app pub date -
Jan 17, 2012
filing date -
Dec 19, 2008
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Abstract
A contact may be fabricated by a method including depositing a dielectric layer on a substrate having a transistor, etching a first opening in the dielectric layer that extends to a source region, forming an insulator on the source region, forming a contact metal on the insulator, the insulator separating the contact metal from the source region, and filling substantially all of the first opening, wherein the contact metal remains separated from the source region after the first opening is filled.
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