Planar cavity MEMS and related structures, methods of manufacture and design structures

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United States of America Patent

PATENT NO 8956903
SERIAL NO

12973147

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Abstract

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A method of forming at least one Micro-Electro-Mechanical System (MEMS) cavity includes forming a first sacrificial cavity layer over a wiring layer and substrate. The method further includes forming an insulator layer over the first sacrificial cavity layer. The method further includes performing a reverse damascene etchback process on the insulator layer. The method further includes planarizing the insulator layer and the first sacrificial cavity layer. The method further includes venting or stripping of the first sacrificial cavity layer to a planar surface for a first cavity of the MEMS.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Herrin, Russell T Essex Junction, US 24 375
Jahnes, Christopher V Upper Saddle River, US 87 1865
Stamper, Anthony K Williston, US 613 6580
White, Eric J Charlotte, US 53 616

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