Method for producing field effect transistor, field effect transistor, display device, image sensor, and X-ray sensor
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United States of America Patent
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Feb 17, 2015
Grant Date -
May 15, 2014
app pub date -
Jan 22, 2014
filing date -
Jul 29, 2011
priority date (Note) -
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Abstract
There is provided a method of fabricating a field effect transistor including: forming a first oxide semiconductor film on a gate insulation layer disposed on a gate electrode; forming a second oxide semiconductor film on the first oxide semiconductor film, the second oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment at over 300° C. in an oxidizing atmosphere; forming a third oxide semiconductor film on the second oxide semiconductor film, the third oxide semiconductor film differing in cation composition from the first oxide semiconductor film and being lower in electrical conductivity than the first oxide semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a source electrode and a drain electrode on the third oxide semiconductor film.
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