Semiconductor device, and manufacturing method and manufacturing apparatus of the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8956917
APP PUB NO 20120187542A1
SERIAL NO

13353826

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Abstract

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According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: (a) forming cutting grooves in an element formation surface of a semiconductor wafer on which semiconductor elements are formed; (b) applying a protection tape on the element formation surface of the semiconductor wafer; (c) grinding a rear surface of the semiconductor wafer to thin the semiconductor wafer and to divide the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor elements are formed; (d) forming an adhesive layer on the rear surface of the semiconductor wafer; (e) separating and cutting the adhesive layer for each of the semiconductor chips; and (f) removing the protection tape. The (e) is performed by spraying a high-pressure air to the adhesive layer formed on the rear surface of the semiconductor wafer while melting or softening the adhesive layer by heating.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kurosawa, Tetsuya Yokohama, JP 46 610
Takyu, Shinya Saitama-ken, JP 33 622
Tomono, Akira Kawasaki, JP 21 859

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