U-shaped semiconductor structure

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United States of America Patent

PATENT NO 8956932
APP PUB NO 20140239394A1
SERIAL NO

13775917

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Abstract

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A method for forming a U-shaped semiconductor device includes forming trenches in a crystalline layer and epitaxially growing a U-shaped semiconductor material along sidewalls and bottoms of the trenches. The U-shaped semiconductor material is anchored, and the crystalline layer is removed. The U-shaped semiconductor material is supported by backfilling underneath the U-shaped semiconductor material with a dielectric material. A semiconductor device is formed with the U-shaped semiconductor material.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3073 29791
Doris, Bruce B Brewster, US 796 13250
Hashemi, Pouya White Plains, US 600 4483
Khakifirooz, Ali Mountain View, US 842 11906

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