Manufacturing method of semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 17, 2015
Grant Date -
Sep 27, 2012
app pub date -
Nov 18, 2011
filing date -
Mar 25, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
According to one embodiment, a stacked film including at least a silicon oxide film is formed by stacking a plurality of films formed of different materials and a hard mask pattern is formed on the stacked film. Then, a stacked film pattern of a predetermined shape is formed by performing anisotropic etching on the stacked film by using the hard mask pattern as an etching mask and the hard mask pattern is removed. The hard mask pattern is formed by stacking at least one first hard mask layer and at least one second hard mask layer. The first hard mask layer is formed of a material having a higher removability in wet etching than the second hard mask layer. The first hard mask layer is arranged immediately above the stacked film.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully