Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer
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United States of America Patent
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Feb 17, 2015
Grant Date -
Dec 25, 2014
app pub date -
Jun 24, 2013
filing date -
Jun 24, 2013
priority date (Note) -
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Abstract
A semiconductor device having a doped well area includes a doped substrate layer formed on a substrate portion of the semiconductor device. The doped substrate layer extends along a first direction to define a length and a second direction perpendicular to the first direction to define a width. A plurality of fins is formed on the doped substrate layer and an oxide substrate layer is formed between each fin. At least one gate is formed on the oxide substrate layer and extends across at least one fin among the plurality of fins.
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