Technology of reducing radiation noise of semiconductor device
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United States of America Patent
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Feb 17, 2015
Grant Date -
Apr 28, 2011
app pub date -
Oct 20, 2010
filing date -
Oct 26, 2009
priority date (Note) -
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Abstract
A first lead frame group is constituted by a plurality of lead frames that are connected to the first circuit, terminals of the plurality of lead frames being provided on a first side of the semiconductor device. A second lead frame group is constituted by a plurality of lead frames that are connected to the second circuit, terminals of the plurality of lead frames being provided on a second side of the semiconductor device. A suspension lead for suspending a die pad that supports the semiconductor chip, the suspension lead being arranged from a corner portion that is formed by the first side and the second side toward the semiconductor chip. Among a group of the terminals of the first lead frame group that are provided on the first side, a terminal on the corner portion side is a terminal for inputting or outputting a signal with a high frequency.
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