Multi-etch process using material-specific behavioral parameters in 3-D virtual fabrication environment
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United States of America Patent
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Feb 17, 2015
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Mar 14, 2013
filing date -
Mar 14, 2013
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Abstract
A virtual fabrication environment for semiconductor device structure development is discussed. The insertion of a multi-etch process step using material-specific behavioral parameters into a process sequence enables a multi-physics, multi-material etching process to be simulated using a suitable numerical technique. The multi-etch process step accurately and realistically captures a wide range of etch behavior and geometry to provide in a virtual fabrication system a semi-physical approach to modeling multi-material etches based on a small set of input parameters that characterize the etch behavior.
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