Importance

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Abstract

A solar cell is formed on an n-type semiconductor substrate having a p+ emitter layer by forming spaced-apart contact/protection structures on the emitter layer, depositing a blanket dielectric passivation layer over the substrate's upper surface, utilizing laser ablation to form contact openings through the dielectric layer that expose corresponding contact/protection structures, and then forming metal gridlines on the upper surface of the dielectric layer that are electrically connected to the contact structures by way of metal via structures extending through associated contact openings. The contact/protection structures serve both as protection against substrate damage during the contact opening formation process (i.e., to prevent damage of the p+ emitter layer caused by the required high energy laser pulses), and also serve as optional silicide sources that facilitate optimal contact between the metal gridlines and the p+ emitter layer.

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First Claim