Method of manufacture of semiconductor isolation structure

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United States of America Patent

PATENT NO 8962445
APP PUB NO 20140106539A1
SERIAL NO

14104575

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Abstract

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A method of formation of an isolation structure for vertical semiconductor devices, the resulting isolation structure, and a memory device to prevent leakage among adjacent vertical semiconductor devices are described.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Karda, Kamal Boise, US 5 12
Mouli, Chandra Boise, US 291 3855

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