High resistivity silicon-on-insulator substrate and method of forming

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United States of America Patent

PATENT NO 8963293
APP PUB NO 20140124902A1
SERIAL NO

14151582

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Abstract

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A semiconductor structure and a method of forming the same. In one embodiment, a method of forming a silicon-on-insulator (SOI) wafer substrate includes: providing a handle substrate; forming a high resistivity material layer over the handle substrate, the high resistivity material layer including one of an amorphous silicon carbide (SiC), a polycrystalline SiC, an amorphous diamond, or a polycrystalline diamond; forming an insulator layer over the high resistivity material layer; and bonding a donor wafer to a top surface of the insulator layer to form the SOI wafer substrate.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Botula, Alan B Essex Junction, US 52 638
Jaffe, Mark D Shelburne, US 146 2260
Joseph, Alvin J Williston, US 129 1207

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