Dense chevron finFET and method of manufacturing same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8963294
APP PUB NO 20080006852A1
SERIAL NO

11857806

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Abstract

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A method, structure and alignment procedure, for forming a finFET. The method including, defining a first fin of the finFET with a first mask and defining a second fin of the finFET with a second mask. The structure including integral first and second fins of single-crystal semiconductor material and longitudinal axes of the first and second fins aligned in the same crystal direction but offset from each other. The alignment procedure including simultaneously aligning alignment marks on a gate mask to alignment targets formed separately by a first masked used to define the first fin and a second mask used to define the second fin.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Beintner, Jochen Wappingers Falls, US 65 1640
Ludwig, Thomas Sindelfingen, DE 73 1293
Nowak, Edward Joseph Essex Junction, US 50 938

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