Semiconductor device and method of forming patterned repassivation openings between RDL and UBM to reduce adverse effects of electro-migration
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United States of America Patent
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Feb 24, 2015
Grant Date -
Jun 6, 2013
app pub date -
Dec 6, 2011
filing date -
Dec 6, 2011
priority date (Note) -
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Abstract
A semiconductor device has a semiconductor wafer with a first conductive layer formed over a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. A plurality of openings is formed in the second insulating layer in a bump formation area of the semiconductor wafer to expose the second conductive layer and reduce adverse effects of electro-migration. The openings are separated by portions of the second insulating layer. A UBM layer is formed over the openings in the second insulating layer in the bump formation area electrically connected to the second conductive layer. A bump is formed over the UBM layer.
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