Semiconductor optical integrated device
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United States of America Patent
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Feb 24, 2015
Grant Date -
Mar 7, 2013
app pub date -
Aug 29, 2012
filing date -
Sep 1, 2011
priority date (Note) -
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Abstract
A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer.
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